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Ordering number : ENA1322
2SK2628FG
SANYO Semiconductors
DATA SHEET
2SK2628FG
Features
* * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-reisitance. Low Qg. Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tc=25C (SANYO's ideal heat dissipation condition)*3 PW10s, duty cycle1% Tc=25C (SANYO's ideal heat dissipation condition)*3 Conditions Ratings 600 30 7 6.2 24 2.0 35 150 --55 to +150 98 6 Unit V V A A A W W C C mJ A
Note : *1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=6A *5 L5mH, Single pulse Marking : K2628
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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O2208QB MS IM TC-00001662 No. A1322-1/6
2SK2628FG
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg VSD Conditions ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6A IS=6A, VGS=0V 3.5 2.0 4.0 0.9 1050 320 180 23 35 90 35 30 0.85 1.2 1.1 Ratings min 600 1.0 100 5.5 typ max Unit V mA nA V S pF pF pF ns ns ns ns nC V
Package Dimensions
unit : mm (typ) 7529-001
10.16 3.18 3.3
4.7 2.54
15.87
6.68
A
15.8
3.23
2.76 1.47 MAX 0.8 1 2 3 12.98
DETAIL-A
(0.84)
0.5
FRAME EMC
( 1.0)
1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG
2.54
2.54
Switching Time Test Circuit
VDD=200V
Avalanche Resistance Test Circuit
L ID=4A RL=50 VGS=15V PW=1s D.C.0.5% D G RGS 50 S VOUT 15V 0V 2SK2628FG 50 VDD 50 RG
P.G
2SK2628FG
No. A1322-2/6
2SK2628FG
For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure. So when mounting the device, please pay enough attention to the isolation with the heatsink. According to the device mounting method, sometimes the insulation voltage may be decreased. (refer to the below insulation characteristics)
Insulation / Ta=25C / RH75%
Parameter Symbol VISO1 Lead & resin insulation * * : AC voltage measurement VISO2 VISO3 Conditions Metal spacer Refer to Fig.1 Washer 5.8mm Refer to Fig.2 Insulation screw, Insulated washer Ratings min typ 1600 2100 3900 max Unit Vrms Vrms Vrms
Fig.1
Fig.2
IT14077
IT14078
Insulaton measuring diagram
Insulation voltage tester AC / 1 s M3 screw Washer Metal spacer
Operating pin
Washer Lead Al heatsink
Al heatsink
IT14079
No. A1322-3/6
2SK2628FG
10 9 8
ID -- VDS
15V V 10 8V
12
ID -- VGS
VDS=10V
Tc= --25C
10
25C
Drain Current, ID -- A
8
Drain Current, ID -- A
7 6 5 4 3 2 1 0 0 2 4 6
75C
6
7V
4
2
VGS=6V
8 10 12 IT03674 3.0 0 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
1.4
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT03675
Tc=25C Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
1.3
2.5
4A
1.2
ID=6A
2.0
1.1
1.5
2A
1.0
1.0
A =2 ID A V, 0 =2 =1 , ID GS 15V V = S VG
0.9
0.5
0.8
0
2
4
6
8
10
12
14
16
18
20
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
10
| yfs | -- ID
IT03676 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Case Temperature, Tc -- C
IS -- VSD
IT03677
Forward Transfer Admittance, | yfs | -- S
7 5
VDS=10V
VGS=0V
2
1.0 7 5 3 2 0.1 0.1
Source Current, IS -- A
3
C -25 =Tc C 75 C 25
2
3
5
7 1.0
2
3
5
7
10
2 IT03678
0.01 7 5 3 2 0.001
0
0.3
Tc= 75C 25C --25 C
0.6
0.9
1.2
1.5 IT03679
3 2
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
10
VGS -- Qg
f=1MHz Gate-to-Source Voltage, VGS -- V
VDS=200V ID=6A
8
Ciss
Ciss, Coss, Crss -- pF
1000 7 5 3 2
6
Coss
Crss
4
100 7 5 0 5 10 15 20 25 30 IT03680
2
0
0
5
10
15
20
25
30 IT03681
Drain-to-Source Voltage, VDS -- V
Total Gate Charge, Qg -- nC
No. A1322-4/6
2SK2628FG
1000 7
SW Time -- ID
VDD=200V
Switching Time, SW Time -- ns
5
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
IDP=24A IDC=7A IDpack=6.2A
10 m
PW10s
10
10 s
Drain Current, ID -- A
3 2
1m
s
0 s
s
10
td(off)
100 7 5 3 2 10 0.1
DC
op
er
ati
tf
tr
td(on)
2 3 5 7 1.0 2 3 5 7 10 2 3
Operation in this area is limited by RDS(on).
on
0m
s
0.01 0.1
Tc=25C Single pulse
23 5 7 1.0 23 5 7 10 23 5 7 100 23
Drain Current, ID -- A
2.5
PD -- Ta
IT03682 40
Drain-to-Source Voltage, VDS -- V
PD -- Tc
57 1000 IT14036
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
35 30 25 20 15 10 5 0
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
120
EAS -- Ta
IT03684
Case Temperature, Tc -- C
IT03685
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175 IT10478
Ambient Temperature, Ta -- C
No. A1322-5/6
2SK2628FG
Note on usage : Since the 2SK2628FG is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice.
PS No. A1322-6/6

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